PIV AND PN JUNTION

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Peak Inverse Voltage (PIV) 


Definition: The most extreme estimation of the converse voltage that a pn intersection or diode can withstand without harming itself is known as its Peak Inverse Voltage.

This rating of Peak Inverse Voltage (PIV) is given and depicted in the information sheet gave by the producer. In any case, if the voltage running over the intersection at converse predisposition condition increments past this predetermined worth, the intersection will get harmed.

As for the most part, a pn intersection or diode is utilized as a rectifier, i.e., it is utilized to change over AC to DC. In this way, care ought to be taken that amid the negative half cycle, the crest estimation of AC voltage ought not be more than the appraised estimation of the Peak Inverse Voltage of the diode.

p n Junction 


At the point when a p-sort semiconductor is appropriately joined to a n-sort semiconductor, the contact surface so framed is called p-n Junction. All the semiconductor gadgets contain one or more p n intersection. The p-n intersection is as a result, the control component for semiconductor gadgets.


Arrangement of p-n Junction 


In genuine practice, the pn intersection is not shaped just by bringing a p-sort semiconductor obstruct close to a n-sort semiconductor piece. Really, p n intersection is manufactured by extraordinary strategy, in particular developing, alloying and diffusing strategies.
The most widely recognized technique for making p n intersection is called Alloying. An alloyed intersection is produced using a n-sort of semiconductor made of germanium or silicon, by liquefying of the pellet of trivalent indium set on the either side. The entire course of action or framework is warmed to around 500 degree Celsius.

Another technique to frame a p n Junction is known as Diffusion. In this procedure, the semiconductor wafers of one conductivity either p-sort or n-sort are set in a vessel that contains an oxide of the polluting influence to be included. The mix is gone gradually through a heater with a controlled temperature of 800⁰C to 1200⁰C contingent on the kind of intersection. At such a high temperature, a gas of contamination particles diffuses into the semiconductor material and structures a dainty layer of inverse conductivity. In this way, bringing about the development of the p n intersection.The PN junction work under a theory - PN Juntion theory

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